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Thickness Dependence of the Initial Oxidation Behaviors of Gd Films Grown on Si by Laser Molecular B
【作 者】
:
【机 构】
:
School of Physical Science and Technology, Sichuan University, Chengdu 610065,China; Research Center
【出 处】
:
武汉理工大学学报(材料科学版)(英文版)
【发表日期】
:
2012年2期
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