在核实验中,半导体硅探测器常用来对带电粒子和中子进行探测。其能量响应和时间响应特性均十分良好,但是耐辐射性能却较差,尤其在伴有γ和中子本底的环境中,由于辐照引起探测器晶格损伤,导致半导体探测器性能退化,如探测器漏电流增大、能量分辨本领变差、能量亏损增加、时间响应增长等,严重影响探测器的使用和寿命。 In nuclear experiments, semiconductor silicon detectors are commonly used to detect charged particles and neutrons. Its energy response and time response characteristics are very good, but the radiation resistance is poor, especially in the environment with γ and neutron background, because of the radiation caused by detector lattice damage, resulting in semiconductor detector performance degradation, If the detector leakage current increases, the ability to distinguish the energy deterioration, energy loss increases, the time response to growth, seriously affecting the detector’s use and life expectancy.