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基于硅的等离子色散效应,构建了SOI基光波导可调光衰减器(VOA)仿真模型,对SOI基亚微米脊形波导结构的模式特性、VOA器件的掺杂区间距、掺杂深度及浓度对VOA特性的影响进行了系统的模拟分析,优化设计出了小尺寸、低损耗的VOA器件,仿真结果表明:该器件在2.1V电压下即可获得30dB衰减量,功耗仅为14mW。
Based on the plasma dispersion effect of silicon, a SOI based optical waveguide dimmable attenuator (VOA) simulation model was constructed. The mode characteristics of SOI-based sub-micron ridge waveguide structures, the doping interval, the doping depth and the concentration of VOA devices The influence of VOA characteristics is systematically simulated and the small size and low loss VOA devices are optimized. The simulation results show that the device can achieve 30dB attenuation at 2.1V and the power consumption is only 14mW.