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异质结光敏晶体管(HPT)是一种具有内部电流增益的光电探测器,且与异质结双极晶体管(HBT)的制作工艺完全兼容。利用超高真空化学气相淀积(UHV/CVD)方法在HBT晶体管的基区和集电区间加入多层Ge量子点材料作为光吸收区。TEM和DCXRD测试结果表明,生长的多层Ge量子点材料具有良好的晶体质量。为了提高HPT的发射极注入效率,采用高掺杂多晶硅作为发射极,并制作出两端HPT型Ge量子点探测器。室温条件下的测试结果表明,HPT型量子点探测器具有低的暗电流密度和高的反向击穿电压。-8 V偏压下,HPT型量子点探测器在1.31μm和1.55μm处的响应度分别为4.47mA/W和0.11 mA/W。与纵向PIN结构量子点探测器相比,HPT型量子点探测器在1.31μm和1.55μm处的响应度分别提高了104倍和78倍。
Heterojunction Phototransistor (HPT) is a photodetector with internal current gain and is fully compatible with HBT fabrication processes. The ultra-high vacuum chemical vapor deposition (UHV / CVD) method is used to add multi-layer Ge quantum dot material as the light absorption region in the base region and the collector region of the HBT transistor. TEM and DCXRD test results show that the grown multilayer Ge quantum dot material has good crystal quality. In order to improve the emitter injection efficiency of the HPT, a highly doped polysilicon was used as an emitter, and a two-end HPT-type Ge quantum dot detector was fabricated. Test results at room temperature show that HPT quantum dot detectors have low dark current density and high reverse breakdown voltage. At -8 V bias, the responsivities of HPT QDs at 1.31μm and 1.55μm are 4.47mA / W and 0.11mA / W, respectively. HPT quantum dot detectors have a 104-fold and a 78-fold increase in responsivity at 1.31 and 1.55 μm, respectively, as compared to the longitudinal PIN structure QDs.