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本文研究Si~+室温深注入(150～160keV,1～3×10~15/cm~2)SOS中600+1050℃两步退火固相外延再生长改善SOS膜界面附近结晶质量和Si~+室温浅注入(85keV,3×10~(15)/cm~2)SOS中600+1050℃两步退火固相外延再生长改善SOS膜表面结晶质量的工艺.180keVH~+沟道效应—背散射测量表明,两步Si~+注入和两步退火团相外延再生长工艺能够有效地改善SOS膜结晶质量°表面归一化最小产额x_o、界面最小产额x_i 和退道率dx/dz分别减小到0.06、0.12和0.19/μm.
In this paper, the two-step anneal solid-state epitaxial growth at 600 + 1050 ℃ in SOS with Si ~ + implantation at room temperature (150 ~ 160 keV, 1 ~ 3 × 10 ~ 15 / cm ~ 2) improves the crystal quality and Si ~ The process of solid phase epitaxial growth annealing at 600 + 1050 ℃ in SOS to improve the crystal quality on the surface of SOS film by shallow implantation (85keV, 3 × 10 ~ (15) / cm ~ 2) .180keVH ~ + channel effect - backscatter The results show that the two-step Si ~ + implantation and two-step anneal of bulk phase epitaxial growth can effectively improve the crystalline quality of SOS film surface normalized minimum yield x_o, minimum interface yield x_i and dx / dz Reduced to 0.06, 0.12 and 0.19 / μm.