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建立了基于漂移扩散理论的4H-SiC埋沟MOSFET器件的物理解析模型。SiC/SiO_2界面处的界面态密度及各种散射机制都会导致器件载流子迁移率的下降,采用平均迁移率模型,分析散射机制对载流子迁移率的影响,讨论了界面态对阈值电压的影响。考虑到器件处在不同工作模式下,沟道电容会随栅压的变化而改变,采用了平均电容概念。器件仿真结果表明:界面态的存在导致漏极电流减小;采用平均迁移率模型得到的计算结果与实验测试结果较为一致。
A physical analytical model of 4H-SiC buried-channel MOSFET based on drift-diffusion theory is established. The interface state density and various scattering mechanisms at the SiC / SiO 2 interface lead to the decrease of the carrier mobility. The average mobility model is used to analyze the influence of the scattering mechanism on the carrier mobility. The effects of the interface states on the threshold voltage Impact. Taking into account the device in different modes of operation, the channel capacitance will change with the gate voltage changes, using the average capacitor concept. The device simulation results show that the existence of interface states leads to the decrease of drain current. The calculated results obtained by using the average mobility model are in good agreement with the experimental results.