RFaxis公司副总裁钱永喜认为传统采用GaAs(砷化镓)或SiGe(硅锗)BiCMOS工艺制造RF射频前端的时代“该结束”了,纯CMOS工艺RF前端IC将在未来十年内主宰消费电子的时代。CMOS工艺的技术难度已经被解决,且具有产能优势。产能是他看好CMOS PA的另一个优势。2013年,全球晶圆代工厂的总营收为430亿美金,而GaAs的代工总额仅为10亿,GaAs PA器件的销售总额也已停滞不前。考虑到只有追随主流工艺才有成本下降空间,因此,RF工艺从GaAs/SiGe转向CMOS是不可逆的,这将解决历史性的供应链瓶颈难题。 Qian Yongxi, vice president of RFaxis, believes that the era of traditional RF front-end manufacturing using GaAs (gallium arsenide) or SiGe (silicon germanium) BiCMOS processes is “over” and pure CMOS process RF front-end ICs will dominate spending over the next decade Electronic age. The technical difficulty of CMOS process has been solved, and has the advantages of production capacity. Production capacity is another advantage he favors CMOS PA. In 2013, the total revenue of the global foundries was 43 billion U.S. dollars, while that of GaAs was only 1 billion. The sales of GaAs PA devices were also stagnating. Considering that there is cost reduction only by following mainstream processes, the shift of RF process from GaAs / SiGe to CMOS is irreversible, which will solve the historic supply chain bottleneck.