【摘 要】
：
采用溶胶凝胶工艺在p-Si衬底上制备了SrBi2Ta2O9/Bi4Ti3O12复合铁电薄膜.研究了SrBi2Ta2O9/Bi4Ti3O12复合薄膜的微观结构与生长行为、铁电性能和疲劳特性.研究表明:Si衬底Bi4
【机 构】
：
桂林电子科技大学信息材料科学与工程系,桂林电子科技大学信息材料科学与工程系 桂林541004,桂林541004
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采用溶胶凝胶工艺在p-Si衬底上制备了SrBi2Ta2O9/Bi4Ti3O12复合铁电薄膜.研究了SrBi2Ta2O9/Bi4Ti3O12复合薄膜的微观结构与生长行为、铁电性能和疲劳特性.研究表明:Si衬底Bi4Ti3O12薄膜易于沿c轴择优生长,并有利于SrBi2Ta2O9/Bi4Ti3O12复合薄膜的生长.合理的SrBi2Ta2O9/Bi4Ti3O12厚度配比能获得较好的铁电性能和优良的抗疲劳特性,SrBi2Ta2O9/Bi4Ti3O12厚度配比为1∶3的复合薄膜的剩余极化强度和矫顽电场分别为8.1μC/cm2和130kV/cm,其无疲劳极化开关次数达1011以上.
SrBi2Ta2O9 / Bi4Ti3O12 composite ferroelectric thin films were prepared by sol-gel process on the p-Si substrate.The microstructure, growth behavior, ferroelectric properties and fatigue properties of SrBi2Ta2O9 / Bi4Ti3O12 composite films were studied.The results show that the Si substrate Bi4Ti3O12 The growth of SrBi2Ta2O9 / Bi4Ti3O12 composite thin film is easy to grow along the c-axis, and the reasonable ratio of SrBi2Ta2O9 / Bi4Ti3O12 thickness can obtain better ferroelectric properties and excellent fatigue properties. The thickness ratio of SrBi2Ta2O9 / Bi4Ti3O12 is 1 : 3 The remanent polarization and coercive electric field of the composite films are 8.1μC / cm2 and 130kV / cm, respectively, and the fatigue-free polarization switching times are more than 1011.
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