论文部分内容阅读
对氧离子注入硅与热氧化硅样品内表面的氧分布进行了剖面观测,两者经过磨角的光学界面类同。用二次离子质谱(SIMS)分析,发现热氧化硅内表面的氧含量高达10~(20)/cm~3数量级。经过热氧化的硅与氧注入硅的表面都清楚地显示出一种电化学染色效应。最后,讨论了氧施主界面态问题。
Oxygen ion implantation of silicon and thermal silica sample inner surface of the oxygen distribution profile was observed, both through the optical angle of the optical interface similar. By SIMS analysis, it was found that the oxygen content of the inner surface of the thermal silica reaches as high as 10-20 / cm3. The surface of silicon that has been thermally oxidized and the surface of silicon implanted with oxygen clearly shows an electrochemical staining effect. Finally, the oxygen donor interface state is discussed.