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采用酞菁铁高温热解方法分别在镀镍和不镀镍硅基底上生长了碳纳米管(carbon nanotube,CNT)薄膜.镍镀层采用化学镀方法制备.为了研究有镍层和无镍层CNT(Si-CNT和Ni-CNT)薄膜阴极的强流脉冲发射稳定性,在相同的主Marx电压下采用二极结构对2种阴极进行重复发射实验.当峰值脉冲电压在1.62～1.66MV(对应场强为11.57～11.85V/μm)时,Si-CNT和Ni-CNT阴极首次发射的电流峰值分别为109.4和180.5A.通过比较2种阴极的归一化电流,可明显发现2种阴极发射稳定性的差异.Si-CNT和Ni-CNT的峰值发射电流由100%衰减到50%所经历的发射次数分别约为3和11次.
Carbon nanotube (CNT) thin films were grown on nickel-plated and un-Ni-plated silicon substrates by high temperature pyrolysis of phthalocyanine, respectively.Nickel plating was prepared by electroless plating method.In order to study the effects of nickel layer and nickel- (Si-CNT and Ni-CNT) thin-film cathodes were studied by using the same main Marx voltage. When the peak pulse voltage was between 1.62 and 1.66 MV The field emission intensity is 11.57 ~ 11.85V / μm), the peak current of the first emission of Si-CNT and Ni-CNT cathode are 109.4 and 180.5A, respectively. By comparing the normalized currents of the two cathodes, two kinds of cathode emission The difference between the stability of the Si-CNT and Ni-CNT peak emission current decay from 100% to 50% experienced the number of shots were about 3 and 11 times.