论文部分内容阅读
采用金属有机物分解法在Pt/Ti/Si(111)基底上制备了退火温度分别为600℃,650℃,700℃的Bi3.15Eu0.85Ti3O12(BET)铁电薄膜,并对其结构及铁电性能进行了测试,再使用扫描探针显微镜对BET薄膜的电畴翻转进行了实时观测.BET薄膜c畴发生180°畴变的最小电压为+6V,而r畴由于其高四方性,即使极化电压增至+12V也不会发生翻转.薄膜的铁电性主要源于c畴的极化,随着退火温度的升高,c畴的区域面积增加,BET薄膜的剩余极化强度随之增大.退火温度为700℃的BET薄膜剩余极化强度达到84μC/cm2.
The Bi3.15Eu0.85Ti3O12 (BET) ferroelectric thin films with annealing temperatures of 600 ℃, 650 ℃ and 700 ℃ were prepared on Pt / Ti / Si (111) substrates by metal organic decomposition method. The real-time observation of the domain inversion of the BET film was carried out by using a scanning probe microscope.The minimum voltage for the c domain of a PET film to undergo a 180 ° domain change was +6 V, whereas the domain of the r domain, due to its high tetragonality, The voltage is increased to +12 V does not flip the film ferroelectric mainly from c domain polarization, with the annealing temperature increases, c domain area increases, the residual polarization of the BET film followed And the remanent polarization of the BET film annealed at 700 ℃ reached 84μC / cm2.