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提出了一种针对单片集成开关电容 DC- DC变换器进行优化的设计方案 .阐述了开关电容 DC- DC变换器电路的拓扑结构及其基本工作原理 ,给出了单片集成开关电容 DC- DC变换器的等效电阻控制方法 .考虑到集成工艺的兼容性问题 ,在电路设计时 ,用 n沟 MOSFET替代二极管 ;为了改善变换器的输出特性 ,在标准 2μm p阱双层多晶硅单层金属 CMOS工艺中增加了一次 MOSFET阈值电压的调整步骤 ,实现了升压开关电容 DC- DC变换器的单片集成 .芯片面积为 0 .4 mm2 ,测试结果显示 ,在变换器输入电压为 3V,输出电压为 5 V,电路开关频率为 9.8MHz时 ,输出功率为 0 .6 3m W,效率达到 6 8% .
Aiming at the optimization design of monolithic integrated switched capacitor DC-DC converter, the topology of switched-capacitor DC-DC converter circuit and its basic working principle are given, and the monolithic integrated switching capacitor DC- DC converter equivalent resistance control method .In consideration of the compatibility of the integrated process, in the circuit design, n-channel MOSFET instead of the diode; In order to improve the output characteristics of the converter, in the standard 2μm p-well double-polycrystalline single-layer metal CMOS process adds an adjustment step of MOSFET threshold voltage to achieve a monolithic integrated boost converter DC-DC converter chip area of 0.4 mm2, the test results show that the converter input voltage of 3V, the output When the voltage is 5 V and the circuit switching frequency is 9.8 MHz, the output power is 0.636 mW and the efficiency reaches 68%.