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对Ce1YIG磁光薄膜的制备过程及磁光性能进行了详细的研究 .用RF磁控溅射法在二氧化硅的基片上淀积Ce1YIG薄膜 ,再对此薄膜进行晶化处理 ,以得到具有磁光性能的Ce1YIG薄膜 .本文讨论了晶化过程中 ,Ce1YIG薄膜微观结构的变化对其磁光性能的影响 .结果表明 :采用波长为 6 30nm的可见光测量 ,薄膜的饱和法拉第旋转系数θF为 0 .8deg/ μm .同时 ,晶化薄膜易磁化方向为平行于膜面方向 ,其居里温度点为 2 2 0℃ .所得Ge1YIG薄膜的参数表明 :所制备的薄膜适宜于制备波导型磁光隔离器
The preparation process and magneto-optical performance of Ce1YIG magneto-optical thin film were studied in detail.The Ce1YIG thin film was deposited on the silicon dioxide substrate by RF magnetron sputtering method, and then the thin film was crystallized to obtain the magneto- Optical properties of Ce1YIG thin films.In this paper, the influence of the microstructure of Ce1YIG thin films on their magneto-optical properties during the crystallization process is discussed.The results show that the saturation Faraday rotation coefficient θF is 0 when measured by visible light with a wavelength of 6 30nm. 8deg / μm. Meanwhile, the easy magnetization direction of the crystallized film parallel to the film surface, the Curie temperature point of 220 ℃ .The obtained Ge1YIG film parameters show that the prepared film is suitable for preparing a waveguide type magneto-optical isolator