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制备和表征了p-i-n型的GaN基雪崩探测器。器件在-5 V下的暗电流约为0.05 nA,-20 V下的暗电流小于0.5 nA。响应增益-偏压曲线显示,可重复的雪崩增益起始于80 V附近,在85 V左右增益达到最大为120,表明所制备的器件具有较好的质量。C-V测量用来确定载流子的分布和耗尽信息,结果显示,p型层在15 V左右达到耗尽,对应的空穴载流子浓度在1.9×1017 cm-1左右,相对低的载流子浓度降低了电场限制,使探测器的工作电压相对偏高。在不同偏压下测量的光谱响应曲线显示出明显的Franz-Keldysh效应。
The p-i-n GaN-based avalanche detector was fabricated and characterized. The dark current at -5 V is about 0.05 nA and the dark current at -20 V is less than 0.5 nA. The response gain-bias curve shows that the repeatable avalanche gain starts around 80 V and reaches a maximum gain of about 120 at about 85 V, indicating that the device is of good quality. The CV measurement was used to determine the carrier distribution and depletion information. The results showed that the p-type layer was depleted at around 15 V with a corresponding hole carrier concentration of 1.9 × 10 17 cm -1. The relatively low carrier The concentration of the electric field reduces the electric field limit, so that the working voltage of the detector is relatively high. Spectral response curves measured at different bias voltages show a pronounced Franz-Keldysh effect.