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采用脉冲激光沉积技术在不同温度和氧分压下,在(100)Si片和抛光石英片上生长了一系列(200)面择优取向的Nd:LuVO4 薄膜。利用X射线衍射分析了所制备薄膜的成膜情况,认为成膜较为适宜的温度为700℃,氧分压为10Pa。用棱镜耦合法测得了该薄膜的有效折射率为2. 0452。利用扫描电镜(SEM)观察了Nd:LuVO4 薄膜的表面形貌。
A series of (200) preferred oriented Nd: LuVO4 thin films were grown on (100) Si and polished quartz wafers by pulsed laser deposition at different temperatures and partial pressure of oxygen. The film formation of the prepared films was analyzed by X-ray diffraction. The suitable temperature for film formation was 700 ° C., and the partial pressure of oxygen was 10 Pa. The effective refractive index of the film was 2. 0452 measured by prism coupling method. The surface morphology of Nd: LuVO4 thin films was observed by scanning electron microscopy (SEM).