日立制作所研制成功一种4K位CMOS静态RAM,其速度是世界最快的——存取时间为35毫微秒。制作这种存贮器采用的是该公司自己发展的Hi—CMOS工艺:双层多品硅布线技术和2.5微米精细加工技术。这种存贮器的功耗低,适用于fi|小型}11算机的现金存贮器、缓冲存贮器和可编程序存贮器。高 Hitachi has successfully developed a 4K-bit CMOS static RAM, which is the fastest in the world - with an access time of 35 nanoseconds. The memory was made using the company's own Hi-CMOS process: double-layer multi-wire silicon wiring technology and 2.5 micron fine processing technology. This memory has low power consumption and is suitable for cash, cache memory and programmable memory of fi | compact} computers. high