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用炉退火和快速红外退火对经过Si离子注入的厚度为0.3—0.54微米的蓝宝石上硅膜(SOS)进行固相外延,并用离子背散射沟道技术和剖面电子显微技术研究其晶体质量的改善.用俄歇能谱结合Ar~+溅射剥层测量硅-蓝宝石界面宽度以估计界面处Al扩散的影响.炉退火和快速红外退火均可使外延膜特别是靠近界面处的晶体质量得到改善,其缺陷密度大大低于原生长膜中的缺陷密度.红外退火后界面宽度略有增加,但炉退火使界面宽度有显著增加.
The silicon thin film (SOS) was annealed by rapid annealing and rapid infrared (IR) anneal. The thickness of the SOS film was 0.3-0.54μm. The backscattering channel technique and cross-sectional electron microscopy The Au-Si interface was measured by Auger spectroscopy combined with Ar ~ + sputter stripping to estimate the effect of Al diffusion at the interface.The annealing of the furnace and rapid infrared anneal both resulted in the quality of the epitaxial film, especially near the interface , The defect density is much lower than the defect density in the original growth film.The interface width increases slightly after IR annealing, but the furnace annealing increases the interface width significantly.