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提出了一个全耗尽SOIMOSFETs器件阈值电压和电势分布的温度模型.基于近似的抛物线电势分布模型,利用适当的边界条件对二维的泊松方程进行求解.同时利用阈值电压的定义得到了阈值电压的模型.该温度模型详细地研究了电势分布和阈值电压跟温度之间的变化关系,同时还近似地探讨了短沟道效应.为了进一步验证模型的正确性,利用SILVACOATAS软件进行了相应的模拟.结果表明,模型计算与软件模拟吻合较好.
A temperature model of threshold voltage and potential distribution for fully depleted SOIMOSFETs is presented. Based on the approximate parabolic potential distribution model, two-dimensional Poisson’s equation is solved by using appropriate boundary conditions. The threshold voltage is used to define the threshold voltage The temperature model is used to study the relationship between the potential distribution and the threshold voltage and the temperature in detail, and the short-channel effect is also discussed approximately.In order to verify the correctness of the model, the corresponding simulation is carried out by SILVACOATAS software The results show that the model calculation is in good agreement with the software simulation.