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应用CF_4、C_4F_8、CF_3I等反应气体SiO_2、单晶硅进行刻蚀研究.研究了刻蚀速率与离子能量、束流密度、入射角的关系、所得 SiO_2对单晶硅刻蚀选择比分别为 9:1(CF_4)、15:1(C_4F_8).刻蚀后,观察到表面有微量氟碳聚合物,但可用适当方法将氟碳沾污物予以消除.实验表明,C_4F_8反应气体是用于刻蚀SiO_2-Si 系统的较好气体,而CF_3I气体则否. 本文主要报道应用CF_4、C_4F_8在反应离子束刻蚀、镀膜装置(RIBC)中刻蚀SiO_2和Si的实验结果.
The etching of SiO_2 and monocrystalline silicon, such as CF_4, C_4F_8 and CF_3I, was studied.The relation between etching rate and ion energy, beam current density and incidence angle was studied.The selectivity of SiO_2 to monocrystalline silicon etching was 9 : 1 (CF_4), 15: 1 (C_4F_8) .After etching, a trace amount of fluorocarbon polymer was observed on the surface, but the fluorocarbon contamination could be eliminated by appropriate methods.Experiments show that the C_4F_8 reaction gas is used for engraving Etch gas of SiO_2-Si system is better than that of CF_3I gas.In this paper, the experimental results on the etching of SiO_2 and Si using CF_4 and C_4F_8 in reactive ion beam etching and coating equipment (RIBC) are reported.