论文部分内容阅读
以高纯五氧化二钒(V2O5)粉末(纯度≥99.99%)为原料,采用真空蒸发——还原工艺制备出VO2(A)型薄膜(A表示发生热致相变的薄膜)。讨论退火温度对VO2(A)型薄膜表面形貌的影响,并进一步研究表面形貌与薄膜光电性质的相关性。结果显示:当退火温度从500℃升高到540℃,VO2(A)型薄膜中层状特征减弱并消失,山峰状颗粒出现并增大,当退火温度继续升高,VO2(A)型薄膜中山峰状颗粒是先减小再增大,但是其尺寸趋于一致,约为50nm;随着VO2(A)型薄膜形貌的改变,相变温度点、数量级、热滞回线宽度等相变性能参数也会改变;VO2(A)型薄膜相变温度点降低,其在所测波段的透过率会降低,但只有在中红外波段,薄膜在相变前后透过率的改变量与电阻变化的数量级有关。
A VO2 (A) thin film was formed by vacuum evaporation - reduction process using high purity vanadium pentoxide powder (purity ≥99.99%) as the raw material. The effect of annealing temperature on the surface morphology of VO2 (A) thin films was discussed, and the correlation between the surface morphology and the photoelectric properties of films was further studied. The results show that when the annealing temperature increases from 500 ℃ to 540 ℃, the shape of the VO2 (A) thin film decreases and disappears, and the peaked particles appear and increase. When the annealing temperature continues to rise, the VO2 (A) Zhongshan peak-shaped particles first decrease and then increase, but their size tends to be consistent, about 50nm; with VO2 (A) -type film morphology changes, the phase transition temperature point, order of magnitude, thermal hysteresis width phase VO2 (A) thin film phase transition temperature decreases, the transmittance in the measured band will be reduced, but only in the mid-infrared band, the change in the film before and after the transformation of the amount of change and The magnitude of the change in resistance is related.