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采用旋转涂覆法在被氧化的硅基底片上形成掺铝氧化锌(AZO)薄膜,再经过真空烘干后制成AZO-Si O2-Si金属氧化物-氧化物-半导体材料样品。使用波长785 nm、功率5 m W的激光在二维方向上扫描样品,绘制出侧向光伏与激光照射点的关系曲线图,研究其二维侧向光伏效应。激光沿一定轨迹扫描金属氧化物-氧化物-半导体结构样品后,利用Origin软件将测得的实验数据拟合成实验结果图。为了更深层次的研究AZO-Si O2-Si结构中的侧向光伏效应,根据电子跃迁、载流子扩散和能带结构理论,结合前人的研究成果建立物理模型。研究显示,作为一种新型的高精度传感器,样品电极点连线区间内测得的侧向光伏曲线灵敏度为90.35 m V·mm-1、线性相关系数为0.9987,因而AZO-Si O2-Si结构可以用作高精度位移传感器(PSD)。实验结果显示激光扫描线偏离电极连线时,线性相关系数和灵敏度都会减小。在垂直于电极连线方向上,虽然侧向光伏曲线没有良好的线性相关性和较高的灵敏度,却具有高度的对称性,AZO-Si O2-Si结构可以用作距离校准传感器(RCD)。
AZO-Si O2-Si metal oxide-oxide-semiconductor material samples were formed by spin-coating on the oxidized silicon substrate with AZO film. Using a laser with a wavelength of 785 nm and a power of 5 mW, the sample was scanned in a two-dimensional direction to draw a graph of the relationship between the lateral photovoltaic and the laser irradiation point and study its two-dimensional lateral photovoltaic effect. After the laser scans the metal oxide-oxide-semiconductor structure sample along a certain track, the measured experimental data are fitted to the experimental result map by the Origin software. In order to further study the lateral photovoltaic effect in the AZO-Si O2-Si structure, a physical model is established based on the electronic transition, carrier diffusion and band structure theory, combined with previous research results. The results show that as a new type of high-precision sensor, the lateral PV curve sensitivity measured in the connection area of the sample electrode is 90.35 mV · mm-1 and the linear correlation coefficient is 0.9987. Therefore, the AZO-Si O2-Si structure Can be used as a high-precision displacement sensor (PSD). The experimental results show that when the laser scanning line deviates from the electrode connection, the linear correlation coefficient and the sensitivity will decrease. The AZO-Si O2-Si structure can be used as a distance calibration sensor (RCD) in the direction perpendicular to the electrode connection, although it has a high degree of symmetry without a good linear dependence and a high sensitivity of the lateral PV curve.