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研究了直流磁控反应溅射制备三元化合物CdIn2O4薄膜(简称CIO膜)的光电性质和温差电动势,及其反应气体中氧浓度和退火处理对CIO膜性质的影响。结果表明CIO膜在可见光区有良好的导电性和透光性,退火处理明显提高了膜的透光率和载流子浓度,这一影响对CIO的广泛应用具有重要的意义。
The optoelectronic properties and temperature difference electromotive force of the CdIn2O4 thin film (CIO film) prepared by DC magnetron reactive sputtering were investigated. The effects of oxygen concentration in the reaction gas and the annealing treatment on the properties of the CIO film were studied. The results show that the CIO film has good conductivity and transparency in the visible light region. The annealing treatment obviously improves the transmittance and the carrier concentration of the film, and this influence is of great significance to the wide application of CIO.