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利用结合移相光栅掩模(PSGM)的激光结晶技术在超薄a-SiNx/a-Si:H/a-SiNx三明治结构样品中制备出二维有序分布的纳米硅阵列.原始样品是用等离子体增强化学气相淀积法生长.a-Si:H层厚为10nm,a-SiNx为50nm,衬底材料为SiO2/Si或熔凝石英.原子力显微镜、剖面透射电子显微镜、高分辨透射电子显微镜对样品表面形貌和微结构的观测结果表明,采用该方法可以在原始淀积的a-Si:H层中得到位置可控的晶化区域:每个晶化区域直径约250nm,具有同PSGM一致的2μm周期;晶化区域内形成的纳米硅颗粒尺寸接近原始淀积的a-Si:H层厚,且晶粒的择优取向为<111>.
A two-dimensionally ordered nanosilica array was fabricated by using laser crystallization combined with phase-shift grating mask (PSGM) in an ultrathin a-SiNx / a-Si: H / a-SiNx sandwich structure sample. A-Si: H layer thickness of 10nm, a-SiNx of 50nm, the substrate material is SiO2 / Si or fused quartz. Atomic force microscopy, cross-section transmission electron microscopy, high resolution transmission electron The microscopic observation of the surface morphology and microstructure of the sample showed that the method can be used to obtain the position-controlled crystallization region in the as-deposited a-Si: H layer: each of the crystallization regions has a diameter of about 250 nm, PSGM. The size of the nanosilica formed in the crystallization zone is close to that of the as-deposited a-Si: H layer, and the preferred orientation of the grains is <111>.