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以金属铜为靶材,氧气为反应气体,保持200℃的基底温度不变,通过调节氧氩比(OFR)和反应压强,利用直流反应磁控溅射方法在玻璃衬底上制备了一系列氧化铜薄膜。利用能谱对薄膜材料的元素含量进行测量和分析,结果显示:OFR=1∶1和2∶1时,铜元素和氧元素的含量比约在0.90~0.97的范围内变动。用四探针测试仪对薄膜的电阻率进行测量,用分光光度计测量薄膜的透过率,并用外推法推导出氧化铜薄膜的禁带宽度。利用霍尔效应测试仪对薄膜的电学参数进行测量和分析。
By using copper as target material and oxygen as reaction gas, the substrate temperature was maintained at 200 ℃. A series of glass substrates were prepared by direct current reactive magnetron sputtering by adjusting the oxygen-argon ratio (OFR) and reaction pressure. Copper oxide film. The elemental content of thin film material was measured and analyzed by EDS. The results showed that the contents of copper and oxygen were varied from 0.90 to 0.97 with OFR = 1: 1 and 2: 1. The resistivity of the film was measured with a four-probe tester, the transmittance of the film was measured with a spectrophotometer, and the forbidden band width of the copper oxide film was extrapolated. The Hall effect tester is used to measure and analyze the electrical parameters of the film.