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传统光刻工艺加工石墨烯沟道的方法中,石墨烯表面的光刻胶残留严重影响其电学特性,导致载流子迁移率大大降低.为了解决光刻胶残留的问题,采用聚合物聚甲基丙烯酸甲酯(poly(methyl methacrylate),PMMA)作为缓冲层,将石墨烯与光刻胶隔离,可以有效保护石墨烯表面,使石墨烯保持干净的表面.电学测量结果表明,与传统光刻方法相比该方法制备出的石墨烯场效应管的迁移率提升了5倍.此外,通过采用聚合物辅助的转移方法,可实现大面积石墨烯的转移.拉曼光谱数据表明,这种转移方法对石墨烯造成的沾污和破损非常微弱.该加工工艺不仅与CMOS工艺兼容,而且适用于各种基于石墨烯的微电子器件.
In the traditional photolithography process for processing graphene channels, the residual photoresist on the surface of graphene seriously affects the electrical properties of the graphene, resulting in greatly reduced carrier mobility.In order to solve the problem of photoresist residue, Poly (methyl methacrylate) (PMMA) as a buffer layer, the graphene and photoresist isolation, which can effectively protect the surface of graphene, graphene to maintain a clean surface.Electrical measurement results show that, compared with the traditional lithography Compared with the proposed method, the mobility of graphene FETs is increased by a factor of 5. In addition, the transfer of large-area graphene can be achieved by the polymer-assisted transfer method. Raman spectroscopy data show that this transfer The method causes very little staining and damage to the graphene, which is not only compatible with the CMOS process but also applicable to various graphene-based microelectronic devices.