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IEEE-CHMTS(元件、混合电路、制造技术学会)和EIA(电子工业联合会)主办的第35届电子元件会议于1985年5月20～22日在美国首都华盛顿希尔顿饭店举行,有三十多个国家八百多人参加。会议共宣读87篇论文,其中美国64篇(含中国访问学者1篇),日本14篇,中国5篇(国内4篇,台湾交通大学1篇),英国3篇,西德1篇。我国在会上宣读的4篇论文为: (1)“密封载体-多层厚膜基板微电子组装组件”,王宝善、汪福章、胡长瑞,南京电子技术研究所。 (2)“二氧化铅掺杂改性的TLMM钽系电容器”,胡南山等,上海电子通信设备研究所。 (3)“低温反应射频溅射C轴生长AIN薄膜的性能”,李兴教等,华中工学院。
The 35th IEEE Conference on Electronic Components, co-organized by IEEE-CHMTS (Component, Hybrid Circuits, Manufacturing Technology Institute) and EIA (Electronic Industries Federation), was held at Hilton Washington, DC, from 20 to 22 May 1985, More than 800 people from a country participated. A total of 87 papers were read, including 64 in the United States (including 1 for Chinese visitors), 14 in Japan, 5 in China (4 in China and 1 at Taiwan Jiaotong University), 3 in Britain and 1 in West Germany. The 4 articles that our country read out at the conference are: (1) “Sealed carrier - microelectronic assembly of multilayer thick film substrate”, Wang Baoshan, Wang Fuzhang, Hu Changrui, Nanjing Institute of Electronic Technology. (2) “lead-doped TLMM tantalum capacitors doped”, Hu Nanshan, Shanghai Institute of electronic communications equipment. (3) “Low temperature reactive RF sputtering C-axis growth AIN film performance,” Li Xingjiao et al., Huazhong Institute of Technology.