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介绍了一种基于电阻率高达1000Ω.cm的硅衬底的锗硅异质结晶体管的研制。首先根据衬底寄生参数模型分析了衬底对器件高频性能的影响,然后设计了器件的材料与横向结构尺寸,该器件采用掩埋金属自对准技术在3μm工艺线上制备而成,测得其典型直流电流增益为120,BVCEO为9.0V,fT为10.2GHz,fmax为5.3GHz,比同结构尺寸的常规N+衬底Si/SiGeHBT的fT和fmax分别高出3.9GHz和1.5GHz。
A silicon germanium heterojunction transistor based on a silicon substrate with a resistivity of up to 1000 Ω · cm is introduced. Firstly, the influence of the substrate on the high-frequency performance of the device is analyzed based on the parasitic parameter model of the substrate. Then, the material and lateral structure dimensions of the device are designed. The device is fabricated on the 3μm process line using buried metal self-alignment technology. Its typical DC current gain is 120, BVCEO is 9.0V, fT is 10.2GHz and fmax is 5.3GHz, which are 3.9GHz and 1.5GHz higher than the fT and fmax of the conventional N + substrate Si / SiGeHBT of the same size.