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将中等剂量的H+注入到硅单晶中，并结合硅片低温键合及后续热处理形成了智能剥离SOI新材料。用热波分析技术对注H+片的剥离现象进行了无损非接触检测研究。采用剖面透射电子显微镜与高分辨率透射电子显微镜等手段对这种SOI材料的微结构进行了分析。研究表明，智能剥离SOI是一种可通过较简单的工艺获得高质量SOI材料的新途径。
The medium dosage of H + was implanted into the silicon single crystal, and combined with the low temperature bonding of the silicon wafer and the subsequent heat treatment, a new material of smart stripping SOI was formed. Non-destructive non-contact detection of H + films was performed using thermal wave analysis technique. The microstructure of this SOI material was analyzed by means of transmission electron microscopy (SEM) and high resolution transmission electron microscopy (TEM). Research shows that smart peel-off SOI is a new way to obtain high-quality SOI materials through simpler processes.