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快速成膜工艺提供了一种简单、高产率、无铅释放的钙钛矿薄膜制备方法.在这一方法中,低浓度的钙钛矿前驱体溶液被滴到240℃的热衬底上,伴随着溶剂在高温条件下的迅速挥发,钙钛矿在衬底表面迅速结晶,生长成一层薄膜.在此过程中,所有含铅的原材料都被沉积到钙钛矿薄膜中,含铅原材料的浪费和铅释放导致的污染都被显著降低.这种方法制备的钙钛矿薄膜的性质可以由前驱体溶液的组分调节.CH_3NH_3Cl(MACl)可以调节结晶过程,有助于提高薄膜表面覆盖率.CH(NH_2)_2I(FAI)有助于提高钙钛矿薄膜的热稳定性.当前驱体组分为PbI_2·(1-x)FAI·xMACl,x=0.75时,快速成膜工艺制备的钙钛矿膜达到最优化性质,由此制备的平面结太阳电池可以实现超过15%的能量转换效率,迟滞现象很小,并且重复性良好.
The rapid film formation process provides a simple, high-yield, lead-free perovskite thin film fabrication process in which a low concentration of perovskite precursor solution is dropped onto a 240 ° C hot substrate, With the rapid evaporation of the solvent at high temperature, perovskite rapidly crystallizes on the substrate surface and grows into a thin film, during which all the lead-containing raw materials are deposited in the perovskite film, Waste and lead pollution are significantly reduced.The perovskite film prepared by this method can be controlled by the composition of the precursor solution.CH_3NH_3Cl (MACl) can regulate the crystallization process and help to improve the film surface coverage .CH (NH_2) _2I (FAI) is helpful to improve the thermal stability of perovskite films.When the precursor composition is PbI_2 · (1-x) FAI · xMACl, x = 0.75, The perovskite film achieves the optimized properties. The planar junction solar cell prepared by the method can realize the energy conversion efficiency of more than 15%, the hysteresis phenomenon is small and the repeatability is good.