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研究了InN薄膜在不同氧气氛中的氧化特性.研究表明,在400℃以下,InN薄膜很难被氧化,而金属In很容易被氧化.因此富In的InN薄膜的氧化在400℃以下主要是金属In的氧化,在400℃以上为金属In和InN的同时被氧化.在400℃以上的氧化过程中,InN的表观氧化速率非常慢,这可能和InN的高温分解有关.InN的湿氧和干氧氧化结果说明湿氧氧化速率比干氧快.
The properties of InN thin films were investigated in different oxygen atmospheres.The results show that the InN thin films are hard to be oxidized and the metal In is easily oxidized below 400 ℃ .The oxidation of In In thin films is mainly The oxidation of metal In is oxidized at the same time as In and InN of metal at 400 ° C. The apparent oxidation rate of InN is very slow during the oxidation at 400 ° C. This may be related to the pyrolysis of InN And dry oxygen oxidation results show that wet oxidation rate faster than dry oxygen.