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利用分子束外延(MBE)技术,以5N的ZnCl2作为掺杂源,在半绝缘GaAs(001)衬底上异质外延生长ZnSe∶Cl单晶薄膜。研究发现,掺入ZnCl2后,ZnSe外延层的结晶质量和表面形貌与本征ZnSe外延层相比变差,双晶X射线摇摆曲线(DCXRC)的ZnSe(004)衍射峰半峰宽(FWHM)从432arcsec增大到529arcsec,表面均方根粗糙度(RMS)从3.00nm增大到3.70nm。当ZnCl2掺杂源炉的温度为170℃时,ZnSe样品的载流子浓度达到1.238×1019 cm-3,可以满足结型器件制作和隧道结材料设计的要求。
The ZnSe:Cl single crystal films were heteroepitaxially grown on semi-insulating GaAs (001) substrates by using molecular beam epitaxy (MBE) with 5N ZnCl2 as doping source. The results show that the crystalline quality and surface morphology of the ZnSe epitaxial layer become worse than that of the intrinsic ZnSe epitaxial layer after doping with ZnCl2. The FWHM of the ZnSe (004) diffraction peak of the double crystal X-ray rocking curve (DCXRC) ) Increased from 432 arcsec to 529 arcsec and the root mean square roughness (RMS) increased from 3.00 nm to 3.70 nm. When the temperature of ZnCl2 doping source furnace is 170 ℃, the carrier concentration of ZnSe sample reaches 1.238 × 1019 cm-3, which can meet the requirements of junction device fabrication and tunnel junction material design.