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通过铝诱导晶化非晶硅(Aluminum-Induced Crystallization,AIC)制备的多晶硅薄膜具有较高的铝掺杂浓度(2×1018cm-3),不适宜作为薄膜太阳能电池的吸收层.我们提出了QCGE AIC法,即:硅原子的快速扩散;冷却成核;晶粒的慢速生长;铝原子的向外扩散.通过精确控制AIC过程中退火温度及模式制备了掺杂率为2×1016cm-3的高品质多晶硅薄膜.二次离子质谱(Secondary-Ion-mass Spectroscopy,SIMS)结果表明:制备多晶硅薄膜中铝残留浓度依赖于退火的温度模式;霍尔效应测试结果表明:制备多晶硅薄膜的掺杂率依赖于退火的温度和退火模式;拉曼光谱表明:通过QCGE AIC制备的多晶硅薄膜中包含有少量由小颗粒硅组成的区域.
The polycrystalline silicon thin films prepared by aluminum-induced crystallization (AIC) have a high aluminum doping concentration (2 × 10 18 cm -3), which is not suitable for the absorption layer of thin-film solar cells.We propose QCGE AIC method, namely: rapid diffusion of silicon atoms; cooling nucleation; slow growth of grains; outward diffusion of aluminum atoms. By precisely controlling the annealing temperature and mode in the AIC process, a doping rate of 2 × 10 16 cm -3 The results show that the residual concentration of aluminum in the polycrystalline silicon film depends on the annealing temperature mode and the Hall effect test results show that the polycrystalline silicon thin film is doped The rate depends on the annealing temperature and the annealing mode; Raman spectroscopy shows that the polycrystalline silicon film prepared by QCGE AIC contains a small amount of regions composed of small-grained silicon.