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本文通过使用Teer-UDP450磁控溅射设备制备CrAlTi(Ce)N薄膜,实验过程中改变偏压。使用了原子力显微镜、X射线衍射仪对CrAlTi(Ce)N薄膜进行分析和研究。试验结果表明:CrAlTi(Ce)N薄膜生长速度随着偏压值的增加而减小;CrAlTi(Ce)N薄膜中XRD衍射峰发生变化,偏压值从60 V升高到100 V,(111)峰择优生长趋势明显,偏压120 V时出现非晶态;CrAlTi(Ce)N薄膜的粗糙度随着偏压值的增加而降低;CrAlTi(Ce)N薄膜的柱状晶尺寸随着偏压值的升高而减小,但当偏压值为120V时,CrAlTi(Ce)N薄膜为非柱状晶结构,CrAlTi(Ce)N薄膜表面出现弹坑形状。
In this paper, CrAlTi (Ce) N thin films were prepared by using Teer-UDP450 magnetron sputtering device, and the bias voltage was changed during the experiment. Atomic force microscope and X-ray diffractometer were used to analyze and study CrAlTi (Ce) N thin films. The experimental results show that the growth rate of CrAlTi (Ce) N thin films decreases with the increase of bias voltage; the XRD diffraction peak of CrAlTi (Ce) N thin films changes with bias voltage increasing from 60 V to 100 V; ) Peak preferential growth is obvious, the amorphous state occurs at a bias voltage of 120 V. The roughness of the CrAlTi (Ce) N thin film decreases with the increase of the bias voltage. The columnar crystal size of the CrAlTi (Ce) N thin film increases with the bias voltage However, when the bias voltage is 120V, the CrAlTi (Ce) N thin film has a non-columnar crystal structure and the crater shape appears on the surface of the CrAlTi (Ce) N thin film.