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提出了一种阶梯掺杂P柱区二维类超结LDMOS结构。漂移区采用P/N柱交替掺杂的方式形成纵向类超结。漂移区的P柱采用掺杂浓度从源端到漏端逐渐变低的变掺杂结构。这种变掺杂P柱区的引入对衬底辅助耗尽效应所带来的电荷不平衡问题进行了调制,使得漂移区可以充分耗尽,提高了耐压。P区变掺杂可以提高N区浓度,降低了导通电阻。与常规二维类超结LDMOS结构相比,击穿电压提高了30%,导通电阻下降了10.5%,FOM提升了87.6%,实现了击穿电压与导通电阻的良好折中。
A two-dimensional super-junction LDMOS structure with ladder-doped p-pillar region is proposed. The drift region is formed by vertical doping of P / N columns. The P-pillar in the drift region adopts a doping structure in which the doping concentration gradually becomes lower from the source end to the drain end. The introduction of such a doped p-pillar region modulates the charge imbalance caused by the substrate-assisted depletion effect, so that the drift region can be fully depleted and the breakdown voltage can be increased. P-doped region can increase the N concentration, reducing the on-resistance. Compared with the conventional two-dimensional super-junction LDMOS structure, breakdown voltage increased by 30%, on-resistance decreased by 10.5%, FOM increased by 87.6%, to achieve a good compromise between breakdown voltage and on-resistance.