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众所周知,半导体二极管PN结的性质与温度密切相关,如反向电流随着温度的升高而增大,扩散电容随着温度的升高而不断减小。这些性质,从原则上来说都是可以用来测试温度的。但是,由于这些性质与温度的关系是非线性的,直接用于测温都不够理想。人们通过长期的实践与总结,发现PN结的正向压降与温度的关系,在常温下呈较理想的线性特征,并可以用V_F=α+βT来描绘这种线性关系。式中V_F为PN结的正向压降,单位为mV;α为工
As we all know, the nature of the semiconductor diode PN junction and temperature are closely related, such as the reverse current increases with temperature increases, the diffusion capacitance decreases with increasing temperature. These properties, in principle, can be used to test the temperature. However, since these properties are non-linear with temperature, they are not ideal for temperature measurement. Through long-term practice and conclusion, people found that the relationship between the forward voltage drop of PN junction and temperature has an ideal linear characteristic at room temperature, and can use V_F = α + βT to describe this linear relationship. Where V_F PN junction forward voltage drop in units of mV; α for the work