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用电子束蒸发法制备TiO2薄膜,并对其进行300℃、400℃、850℃热处理和掺杂。详细研究了工艺参数、热处理和掺杂对TiO2薄膜折射率的影响。实验结果表明:镀制高折射率的氧化钛薄膜最佳工艺参数为基片温度200℃、真空度2×10-2Pa、沉积速率0.2nm/s;随着热处理温度的升高,薄膜折射率也逐渐增大;适量掺杂CeO2(CeO2∶TiO2质量比1.7∶12)会提高薄膜的折射率,过量掺杂CeO2反而会降低折射率。
The TiO2 thin films were prepared by electron beam evaporation and annealed at 300 ℃, 400 ℃ and 850 ℃. The effect of process parameters, heat treatment and doping on the refractive index of TiO2 thin films has been studied in detail. The experimental results show that the optimum technological parameters of titanium oxide film with high refractive index are as follows: the substrate temperature is 200 ℃, the vacuum degree is 2 × 10-2Pa and the deposition rate is 0.2nm / s. With the increase of the heat treatment temperature, the refractive index But also gradually increased. The proper doping amount of CeO2 (CeO2: TiO2 mass ratio 1.7: 12) will increase the refractive index of the film, while excessive doping CeO2 will reduce the refractive index.