Novel AlGaN/GaN high electron mobility transistors (HEMTs) with an insulated gate have been demonstrated by oxidizing the surface of an AlGaN layer using induct
We present a numerical result of photoionization rate for the one-dimensional molecular hydrogen ion model exposed to intense light of 1×1016-2×1016 W/cm2, 55
The heat transport in a one-dimensional (1D) carbon nanowire (CNW) lying in an exteal potential with different amplitudes and periods is studied by the non-equi