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基于次级电子倍增动力学模型和次级电子发射曲线,运用蒙特卡罗方法模拟电介质表面具有纵向射频电场作用下的单边次级电子倍增现象,研究次级电子倍增的表面电场敏感曲线和时间演化图像.以一个S波段射频介质窗为例,计算次级电子在其介质表面的沉积功率.结果表明,纵向射频电场可能加剧电介质表面的次级电子倍增效应,易于导致介质片破裂,不利于高频能量传输.
Based on the secondary electron multiplication dynamics model and the secondary electron emission curves, the unilateral secondary electron multiplication phenomenon under the longitudinal RF electric field on the dielectric surface was simulated by Monte Carlo method. The surface electric field sensitivity curve and time of secondary electron multiplication Evolutionary image.With a S-band RF dielectric window as an example, the deposition power of the secondary electrons on the dielectric surface was calculated.The results show that the longitudinal RF electric field may exacerbate the secondary electron multiplication effect on the dielectric surface, which may lead to rupture of the dielectric sheet, High-frequency energy transmission.