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设计了一个可以同时工作在900 MHz和2 .4 GHz的双频带(Dual-Band)低噪声放大器(LNA)。相对于使用并行(parallel)结构LNA的双频带解决方案,同时工作(concurrent)结构的双频带LNA更能节省面积和减少功耗。此LNA在900MHz和2 .4 GHz两频带同时提供窄带增益和良好匹配。该双频带LNA使用TSMC 0 .25μm1P5 M RF CMOS工艺。工作在900 MHz时,电压增益、噪声系数(Noise Figure)分别是21 dB、2 .9 dB;工作在2 .4 GHz时,电压增益、噪声系数分别是25dB、2 .8 dB,在电源电压为2 .5 V时,该LNA的功耗为12 .5 mW,面积为1 .1 mm×0 .9 mm。使用新颖的静电防护(ESD)结构使得在外围PAD上的保护二极管面积仅为8μm×8μm时,静电防护能力可达2 kV(人体模型)
A dual-band low-noise amplifier (LNA) designed to operate simultaneously at 900 MHz and 2.4 GHz is designed. Dual-band LNAs with concurrent architectures save area and power consumption relative to dual-band solutions that use parallel-structured LNAs. The LNA provides both narrowband gain and good matching in both the 900MHz and 2.4GHz bands. The dual-band LNA uses the TSMC 0.25μm1P5 M RF CMOS process. At 900 MHz, the voltage gain and noise figure are 21 dB and 29.9 dB, respectively. The voltage gain and noise figure for the 2.4 GHz operation are 25 dB and 2.8 dB respectively. When the power supply voltage At 2.5 V, the LNA consumes 12.5 mW and has an area of 1.1 mm × 0.9 mm. The electrostatic protection (up to 2 kV) can be achieved using a novel electrostatic protection (ESD) structure with a protective diode area of only 8 μm × 8 μm on the peripheral PAD (Human Body Model)