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用直流磁控反应溅射合金靶制备了ＺｎＯ薄膜，研究了衬底温度和退火温度对薄膜的结构及电学和光学性能的影响．衬底温度升高能改善薄膜的电学特性，其原因是薄膜晶粒尺寸的增大温度升高导致薄膜基本光学吸收边向短波移动，但对高透射区（４５０～８５０ｎｍ）的透射率影响不大．
ZnO thin films were prepared by DC magnetron reactive sputtering of alloy targets. The effects of substrate temperature and annealing temperature on the structure and electrical and optical properties of the films were investigated. The increase of the substrate temperature can improve the electrical properties of the thin film. The reason is that the increase of the grain size of the thin film causes the optical absorption of the thin film to move towards the short wavelength, but has little effect on the transmittance of the high transmittance region (450-850 nm) .