High lattice match growth of InAsSb based materials on GaSb substrates is demonstrated.The present results indicate that a stable substrate temperature and the optimal Sux ratios are of critical importance in achieving a homogeneous InAsSb based material composition throughout the growth period.The quality of these epilayers is assessed using a high-resolution x-ray diffraction and atomic force microscope.The mismatch between the GaSb substrate and InAsSb alloy achieves almost zero,and the rms surface roughness of InAsSb alloy achieves around 1.7? over an area of 28μm×28μm.At the same time,the mismatches between GaSb and InAs/InAs_(0.73)Sb_(0.27) superlattices(SLs) achieve approximately 100arcsec(75 periods) and zero(300 periods),with the surface rms roughnesses of InAs/InAs_(0.73)Sb_(0.27) SLs around 1.8? (75 periods) and 2.1 ?(300 periods)over an area of 20μm×20μm,respectively.After fabrication and characterization of the devices,the dynamic resistance of the n-barrier-n InAsSb photodetector near zero bias is of the order of 10~6 Ω·cm~2.At 77 K,the positive-intrinsic-negative photodetectors are demonstrated in InAsSb and InAs/InAsSb SL(75 periods) materials,exhibiting fifty-percent cutoff wavelengths of 3.8 μm and 5.1 μm,respectively. High lattice match growth of InAsSb based materials on GaSb substrates is displayed. The present results that that stable substrate temperature and the optimal Sux ratios are of critical importance in achieving a homogeneous InAsSb based material composition throughout the growth period. The quality of these epilayers is assessed using a high-resolution x-ray diffraction and atomic force microscope. The mismatch between the GaSb substrate and InAsSb alloy achieves almost zero, and the rms surface roughness of InAsSb alloy achieves around 1.7 Å over an area of ​​28 μm × 28 μm. At the same time, the mismatches between GaSb and InAs / InAs_ (0.73) Sb_ (0.27) superlattices (SLs) achieve approximately 100 arcsec (75 periods) and zero (300 periods) with the surface rms roughnesses of InAs / InAs_ (0.27) SLs around 1.8? (75 periods) and 2.1? (300 periods) over an area of ​​20 μm × 20 μm, respectively. After fabrication and characterization of the devices, the dynamic resistance of the n-barrier-n InAsSb The positive-intrinsic-negative photodetectors are shown in InAsSb and InAs / InAsSb SL (75 periods) materials, exhibiting a 50- of 3.8 μm and 5.1 μm, respectively.