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对常规傅里叶变换发光测量方法进行改进 ,引入双调制技术 ,消除了室温背景黑体辐射在 4μm至 5μm以上区域对光致发光测量带来的严重干扰 ,在 10μm红外波段得到了组分 x=0 .2 1窄禁带 Hg Cd Te的光致发光光谱 ,对光谱的主要结构也进行了指认 ,发现存在于这种材料中的 4me V的杂质能级 ,其来源是材料中的浅杂质 .
The conventional Fourier transform luminescence measurement method is improved. The double modulation technique is introduced to eliminate the serious interference of photoluminescence measurement in the region of 4μm to 5μm of blackbody radiation at room temperature. The component x = 0 .2 1 The photoluminescence spectrum of Hg Cd Te with narrow bandgap also identifies the main structure of the spectrum. The impurity level of 4me V present in this material was found, and its source was the light impurity in the material.