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为探讨不同激光电化学刻蚀的工艺特性,采用两种激光(KrF:248 nm,20 ns和半导体激光:808 nm连续)作为光源,聚焦激光照射浸于溶液中的阳极上,实现激光诱导电化学刻蚀材料。在实验的基础上,通过对金属和半导体材料刻蚀的比较,分析了不同激光电化学刻蚀不同材料的工艺特点。讨论两种激光对半导体与金属的不同刻蚀机制,并比较了这两种激光对不同材料的刻蚀性能。实验表明,248 nm激光电化学刻蚀工艺中直刻占主要部分,该工艺刻蚀硅比刻蚀金属有更好的刻蚀速率;808 nm激光诱导电化学刻蚀工艺是一个光热刻蚀过程,该工艺不适合刻蚀半导体材料。
In order to investigate the process characteristics of different laser electrochemical etching, two kinds of lasers (KrF: 248 nm, 20 ns and semiconductor laser: 808 nm continuous) were used as the light source to focus the laser irradiation on the anode in the solution to achieve laser induced electricity Chemical etching materials. On the basis of experiments, by comparing the etching of metal and semiconductor materials, the process characteristics of different materials for electrochemical etching of different materials are analyzed. The different etching mechanisms of the two kinds of lasers on the semiconductor and the metal are discussed, and the etching performance of the two lasers on different materials is compared. Experiments show that 248 nm laser electrochemical etching process directly engraving the main part of the process of etching silicon etching metal has a better etching rate; 808 nm laser-induced electrochemical etching process is a photothermal etching Process, the process is not suitable for etching semiconductor materials.