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采用高倍光学显微镜和焦平面探测器测试系统对焦平面探测器相连缺陷元进行了测试分析,研究了焦平面探测器相连缺陷元的成因。研究结果表明:借助高倍光学显微镜很难识别相连缺陷元;采用焦平面探测器响应测试系统进行测试时,相连缺陷元的响应电压与正常元基本相同,相连缺陷元无法被识别;采用焦平面探测器串音测试系统进行测试时,相连缺陷元之间串音为100%,明显不同于正常元,此时两元相连缺陷元响应电压是正常元响应电压的二分之一,相连缺陷元可以被有效识别。光刻腐蚀引入的台面或电极相连,以及光刻剥离引入的铟柱相连导致了缺陷元的产生;通过光刻腐蚀、剥离工艺优化,可以有效减少焦平面探测器相连缺陷元。
The defect elements of focal plane detectors were tested and analyzed by high power optical microscope and focal plane detector test system. The causes of the defect elements in focal plane detectors were studied. The results show that it is difficult to identify the connected defects by high power optical microscope. When the focal plane detector responds to the test system, the response voltage of the connected defects is almost the same as that of normal elements, and the connected defects can not be identified. When the crosstalk test is performed, the crosstalk between connected defective cells is 100%, which is obviously different from the normal one. At this time, the response voltage of the two-connected defective cells is one-half of the normal one. The connected defective cells can Be effectively identified Photolithographic etching introduced mesa or electrode connected, as well as the introduction of lithography peeling indium column lead to the formation of defect elements; lithography etching, stripping process optimization, can effectively reduce the focal plane detector connected to the defect element.