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对1 060 nm高功率垂直腔面发射激光器的有源区进行了理论计算和设计。对比了GaAsP、GaAs和AlGaAs三种不同材料的垒层所组成的高应变InGaAs量子阱的性能。为了确定有源区阱层和垒层的参数,考虑了自热效应对功率的影响,使得模型更加精确可靠。发现所设计的In0.28Ga0.72As量子阱的阱宽和阱数的最佳值分别为9 nm和3个,输出功率可以达到瓦级。另外,对比了三种不同垒层的温度特性,结果显示,使用GaAsP垒层的器件在高温下具有更高的功率和更好的温度稳定性。最后,利用MOCVD生长了InGaAs/GaAsP量子阱并测试了其PL谱,实验数据与理论结果符合得很好。
The active region of 1 060 nm high power vertical-cavity surface-emitting laser is theoretically calculated and designed. The performance of high-strain InGaAs quantum wells composed of three different layers of GaAsP, GaAs and AlGaAs materials is compared. In order to determine the parameters of the well layer and the barrier layer in the active region, the effect of self-heating effect on the power is considered, which makes the model more accurate and reliable. It is found that the best values of well width and well number of the designed In0.28Ga0.72As quantum well are 9 nm and 3, respectively, and the output power can reach the watt level. In addition, the temperature characteristics of three different barrier layers are compared. The results show that devices using GaAsP barrier have higher power and better temperature stability at high temperature. Finally, InGaAs / GaAsP quantum wells were grown by MOCVD and their PL spectra were tested. The experimental data are in good agreement with the theoretical results.