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本文认为,Ⅰ层中不会有电子浓度和空穴浓度处处相等的电中性近似,这两种浓度都要随扩散距离的增加而衰减.本文用准中性条件来求解电子和空穴的连续性方程,导出这两种浓度都按扩散距离的负指数函数在Ⅰ层中分布.这样,其载流子一载流子散射效应可忽略不计,其俄歇复合较小,比用电中性近似求得的载流子分布的俄歇复合要小许多倍.
In this paper, we assume that there will be no electron-neutral approximation of the electron concentration and hole concentration everywhere in the I layer, both of which degenerate with increasing diffusion distance.In this paper, the quasi-neutral conditions are used to solve the electron and hole The continuity equation and the derivation of these two concentrations are all distributed in layer I according to the negative exponential function of the diffusion distance so that the carrier-to-daughter scattering effect is negligible and the Auger recombination is smaller than that in electricity The Auger recombination with carrier distribution obtained by sexual approximation is many times smaller.