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利用真空电子束蒸发技术,通过改变Al的蒸发速率在P型〈1 0 0〉晶向的单晶硅片上制备了两种不同平整度的Al膜,在草酸中对它们分别进行一次阳极氧化,研究Al膜平整度对硅基AAO(多孔硅基氧化铝)有序度的影响.结果表明,硅基AAO的有序度对Al膜的平整度有很大的依赖性,硅基Al膜的平整度越高,所获得的硅基AAO的有序度就越好.另外,对平整度较差的Al膜进行二次阳极氧化可以显著地改善硅基AAO的有序度.
Two kinds of Al films with different flatness were prepared by vacuum electron beam evaporation on single crystal silicon wafer with P type <1 0 0> orientation by changing the evaporation rate of Al. Each layer was anodized in oxalic acid , The effect of Al film flatness on the ordering degree of Si-based AAO (porous alumina-based alumina) was studied.The results show that the ordering degree of Si-based AAO has a great dependence on the flatness of Al film, The better the degree of ordering of the obtained silicon-based AAO is obtained.In addition, the secondary anodization of the Al film with poor flatness can remarkably improve the ordering of the silicon-based AAO.