论文部分内容阅读
报道了低压 MOCVD生长的同一 Ga N薄膜不同位置的微区 Raman散射光谱 .观测到了微区结构不完整对 Raman谱的影响 .通过 X射线衍射分析 ,证实了该样品晶体质量是不均匀的 ,而且微结构缺陷的存在是导致回摆曲线展宽的主要原因 .结合 Hall测量结果 ,对 Ga N薄膜的 Al( L O)模式的移动进行了电声子相互作用分析 ,认为 A1 ( LO)模式的移动可能与电声子相互作用无关 ,而是受内部应力分布不均匀的影响所致 .
The Raman scattering spectra at different positions of the same GaN thin film grown by low pressure MOCVD are reported.The influence of the micro-structure on the Raman spectrum is observed.It is confirmed by X-ray diffraction that the crystal quality of the sample is not uniform, The existence of microstructure defects is the main reason that causes the back-sway curve to broaden.According to the results of Hall measurement, the electro-phonon interaction of Al (LO) mode movement of Ga N thin film is analyzed and it is considered that the movement of A1 (LO) Has nothing to do with the interaction of electro-phonon, but due to the uneven distribution of internal stress.