论文部分内容阅读
采用直流反应溅射法在P-Si(100)衬底上制备了ZnO薄膜,XRD测量表明ZnO为沿c轴高度取向的多晶薄膜,I-V特性曲线表明,ZnO/Si异质结具有明显的整流特性。研究了退火温度对异质结光电转换特性的影响,结果显示,合适的退火温度能显著增大异质结的开路电压和短路电流,进而增大异质结的光电转换效率,经400℃退火后异质结获得最佳的转换效率。当退火温度达到或超过500℃时,异质结的反向电流迅速增加,光生电压和光生电流大幅度减小。通过对ZnO薄膜结构和电学性质的测量和分析,推测异质结的光电转换特性改变主要受ZnO薄膜的电学性质影响。
ZnO thin films were deposited on P-Si (100) substrates by direct current reactive sputtering. The XRD results showed that ZnO is a polycrystalline thin film oriented highly along the c-axis. The IV characteristics show that ZnO / Si heterojunction has obvious Rectifier characteristics. The effects of annealing temperature on the photoelectric conversion properties of the heterojunction were investigated. The results show that the suitable annealing temperature can significantly increase the open circuit voltage and short circuit current of the heterojunction, and then increase the photoelectric conversion efficiency of the heterojunction. After annealed at 400 ℃ After the heterojunction get the best conversion efficiency. When the annealing temperature reaches or exceeds 500 ℃, the reverse current of the heterojunction rapidly increases, and the photogenerated voltage and photocurrent greatly decrease. By measuring and analyzing the structure and electrical properties of ZnO thin films, it is inferred that the change of photoelectric conversion properties of heterojunction is mainly affected by the electrical properties of ZnO thin films.