用三维集成CMOS工艺研制了 16× 16有机 /无机复合敏感膜红外热释电面阵。用掺钙和镧的钛酸铅 (PCLT)纳米粉粒与聚偏氟乙烯 三氟乙烯 [P(VDF TrFE) ]均匀复合 ,作面阵的敏感膜。用PMOS场效应管作热释电元件的阻抗转换 ,用双 16位移位寄存器作敏感元件信号读出的选址。用 6μm厚的聚烯亚胺薄膜作为热释电面阵与CMOS读出电路间的热隔离。用 4 0nm厚的Ni Cr膜作面阵的上电极及吸收层。测得该面阵单元在 6 0 0Hz下探测率峰值为 2 .6× 10 7cmHz1/2 /W。 The 16 × 16 organic / inorganic composite sensing infrared pyroelectric area array was developed with the integrated 3D CMOS technology. With calcium and lanthanum lead titanate (PCLT) nano-particles and polyvinylidene fluoride trifluoroethylene [P (VDF TrFE)] uniform composite, as a matrix of sensitive film. With PMOS FET for pyroelectric element impedance conversion, dual 16-bit shift register for sensing the signal readout site. A 6μm thick polyimide film was used as thermal isolation between the pyroelectric array and the CMOS sensing circuit. A 400 nm-thick NiCr film was used as the top electrode and the absorber layer of the area array. Measured the area array unit at 600 Hz peak detection rate of 2.6 × 10 7cmHz1 / 2 / W.